MMRF1314H MMRF1314HS MMRF1314GS

1

RF Device Data

NXP Semiconductors

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

These RF power devices are designed for pulse applications operating at

frequencies from 1200 to 1400 MHz. The devices are suitable for use in pulse

applications and are ideal for use in high power military and commercial L--Band

radar applications.

Frequency

(MHz)

Signal Type

(W)

(dB)

(%)

1200

Pulse

(128 μsec, 10% Duty Cycle)

1130 Peak

15.5

47.5

1300

1170 Peak

17.2

47.0

1400

1000 Peak

17.0

46.5

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

(W)

Test

Voltage

Result

Pulse

(128 μsec,

10% Duty Cycle)

> 20:1 at

All Phase

Angles

31.6 Peak

(3 dB

Overdrive)

52

No Device

Degradation

1. Measured in 1400 MHz production test fixture.

Features

• Internally input and output matched for broadband operation and ease of use

• Device can be used in a single--ended, push--pull or quadrature configuration

• High ruggedness, handles > 20:1 VSWR

• Integrated ESD protection with greater negative gate--source voltage range

for improved Class C operation and gate voltage pulsing

• Characterized with series equivalent large--signal impedance parameters

Typical Applications

• Military and commercial L--Band radar systems

Document Number: MMRF1314H

Rev. 1, 1/2017

NXP Semiconductors

Technical Data

1200–1400 MHz, 1000 W PEAK, 52 V

AIRFAST RF POWER LDMOS

TRANSISTORS

MMRF1314H

MMRF1314HS

MMRF1314GS

(Top View)

Drain A

31

Figure 1. Pin Connections

42 Drain B

Gate A

Gate B

NI--1230GS--4L

MMRF1314GS

NI--1230S--4S

MMRF1314HS

NI--1230H--4S

MMRF1314H

Note: The backside of the package is the

source terminal for the transistor.

© 2017 NXP B.V.