2

RF Device Data

Freescale Semiconductor

MMRF1004NR1 MMRF1004GNR1

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +68

Vdc

Gate--Source Voltage

--0.5, +12

Vdc

Storage Temperature Range

--65 to +150

C

Case Operating Temperature

150

C

225

C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 78C, 1 W CW

Case Temperature 79C, 10 W PEP, Two--Tone Test

2.3

2.9

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

1A

Machine Model (per EIA/JESD22--A115)

A

Charge Device Model (per JESD22--C101)

IV

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

3

260

C

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

Adc

Zero Gate Voltage Drain Leakage Current

—

—

1

Adc

Gate--Source Leakage Current

—

—

500

Adc

On Characteristics

Gate Threshold Voltage

1.5

2.2

3.5

Vdc

Gate Quiescent Voltage

2

2.8

4

Vdc

Drain--Source On--Voltage

—

0.33

0.4

Vdc

Output Capacitance

—

20

—

pF

Reverse Transfer Capacitance

—

11.6

—

pF

Input Capacitance

—

120

—

pF

1. Continuous use at maximum temperature will affect MTTF.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

3. Part internally matched on input.

(continued)