MMRF1004N datasheet(1/27 Pages) NXP

Part #	MMRF1004N

Description	RF Power Field Effect Transistors

PDF	27 Pages

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for Class A or Class AB general purpose applications with

frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation

and multipurpose amplifier applications.

 Typical Two--Tone Performance @ 2170 MHz: VDD =28 Vdc,IDQ =

130 mA, Pout = 10 W PEP

Power Gain — 15.5 dB

Drain Efficiency — 36%

IMD — --34 dBc

 Typical 2--Carrier W--CDMA Performance: VDD =28 Vdc,IDQ = 130 mA,

Pout = 1 W Avg., Full Frequency Band (2130--2170 MHz), Channel

Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability

Power Gain — 15.5 dB

Drain Efficiency — 15%

IM3 @ 10 MHz Offset — --47 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — --49 dBc in 3.84 MHz Channel Bandwidth

 Typical Single--Carrier N--CDMA Performance: VDD =28 Vdc,IDQ =

130 mA, Pout = 1 W Avg., Full Frequency Band (1930--1990 MHz), IS--95

(Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth =

1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 15.5 dB

Drain Efficiency — 16%

ACPR @ 885 kHz Offset = --60 dBc in 30 kHz Bandwidth

 Typical GSM EDGE Performance: VDD =28 Vdc,IDQ = 130 mA, Pout =

4 W Avg., Full Frequency Band (1805--1880 MHz)

Power Gain — 16 dB

Drain Efficiency — 33%

EVM — 1.3% rms

 Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 W CW

Output Power

Features

 Characterized with Series Equivalent Large--Signal Impedance Parameters

 Internally Matched for Ease of Use

 Qualified Up to a Maximum of 32 VDD Operation

 Integrated ESD Protection

 225C Capable Plastic Package

 In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.

Document Number: MMRF1004N

Rev. 1, 1/2014

Freescale Semiconductor

Technical Data

(Top View)

Drain

21

Gate

1600--2200 MHz, 10 W, 28 V

GSM, GSM EDGE

SINGLE N--CDMA

2xW--CDMA

LATERAL N--CHANNEL

RF POWER MOSFETs

MMRF1004NR1

MMRF1004GNR1

TO--270--2

PLASTIC

MMRF1004NR1

TO--270G--2

PLASTIC

MMRF1004GNR1

Figure 1. Pin Connections

Note: The backside of the package is the

source terminal for the transistor.

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