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MMRF1004N Datasheet(PDF) 7 Page - NXP Semiconductors

Part # MMRF1004N
Description  RF Power Field Effect Transistors
PDF  27 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMRF1004N Datasheet(HTML) 7 Page - NXP Semiconductors

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MMRF1004NR1 MMRF1004GNR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 2110--2170 MHz
30
47
P3dB = 41.5 dBm (14.2 W)
Pin, INPUT POWER (dBm)
VDD =28 Vdc,IDQ = 130 mA
Pulsed CW, 8 sec(on), 1 msec(off)
f = 2170 MHz
45
43
41
39
35
22
24
26
Actual
Ideal
28
20
Figure 9. Pulsed CW Output Power versus
Input Power
P1dB = 40.9 dBm (12.26 W)
30
11
18
0.1
0
70
TC =--30_C
25_C
--30_C
10
1
16
15
14
12
50
40
20
10
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Gps
85_C
25_C
85_C
VDD =28 Vdc
IDQ = 130 mA
f = 2170 MHz
D
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
IDQ = 130 mA
f = 2170 MHz
10
16
018
13
11
14
69
12
21
15
3
VDD =24 V
28 V
32 V
--36
27
400
--15
6
S21
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
S11
18
3
90
0
--3
--18
--6
--27
--12
3200
2800
2400
2000
1600
1200
800
VDD =28 Vdc
Pout = 10 W (PEP)
IDQ = 130 mA
37
17
13
60
30
15
12
--9
--9
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 and D = 47.2%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
250
108
90
TJ, JUNCTION TEMPERATURE (C)
Figure 13. MTTF versus Junction Temperature — CW
107
106
104
110
130
150
170
190
210
230
105
108
108



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