MHT1002N datasheet(3/20 Pages) NXP

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MHT1002NR3 MHT1002GNR3

RF Device Data

Freescale Semiconductor, Inc.

Table 6. Typical Performance

In Freescale Reference Circuit, 50 ohm system, VDD =48 Vdc, IDQ(A+B) = 100 mA, Pout = 350 W, 915 MHz

Characteristic

Symbol

Min

Typ

Max

Unit

Power Gain

Gps

—

20.7

—

Power Added Efficiency

PAE

—

66.9

—

Pout @ 1 dB Compression Point

P1dB

—

387

—

Pout @ 3 dB Compression Point, CW

P3dB

—

443

—

Gain Variation over Temperature

(+25

C to +125C)

G

—

0.04

—

dB/

C

Output Power Variation over Temperature

(+25

C to +125C)

P1dB

—

0.009

—

dB/

C

Table 7. Load Mismatch/Ruggedness

In Freescale Reference Circuit, 50 ohm system, IDQ(A+B) = 100 mA

Frequency

(MHz)

Signal Type

VSWR

(W)

Test Voltage, VDD

Result

915

> 10:1 at all

Phase Angles

9.0

(3 dB Overdrive)

No Device

Degradation

Table 8. Ordering Information

Device

Tape and Reel Information

Package

MHT1002NR3

R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel

OM--780--4L

MHT1002GNR3

OM--780G--4L

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