MHT1002NR3 MHT1002GNR3

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

These 350 W CW RF power transistors are designed for consumer and

commercial cooking applications operating in the 915 MHz ISM band.

Frequency

(MHz)

Signal Type

(dB)

PAE

(%)

(W)

902

CW

20.1

64.1

359

915

20.7

66.9

355

928

20.1

68.1

361

Load Mismatch/Ruggedness

Frequency

(MHz)

Signal Type

VSWR

(W)

Test

Voltage

Result

915

CW

> 10:1

at all Phase

Angles

9.0

(3 dB

Overdrive)

48

No Device

Degradation

Features

 Characterized with series equivalent large--signal impedance parameters

and common source S--parameters

 Device can be used single--ended or in a push--pull configuration

 Internally input pre--matched for ease of use

 Qualified for operation at 50 Vdc

 Integrated ESD protection

 150C case operating temperature

 225C die temperature capability

Typical Applications

 Consumer cooking

 Commercial cooking

Document Number: MHT1002N

Rev. 0, 4/2015

Freescale Semiconductor

Technical Data

915 MHz, 350 W CW, 48 V

RF POWER LDMOS TRANSISTOR

FORCONSUMERAND

COMMERCIAL COOKING

MHT1002NR3

MHT1002GNR3

OM--780--4L

PLASTIC

MHT1002NR3

OM--780G--4L

PLASTIC

MHT1002GNR3

(Top View)

Drain A

31

Figure 1. Pin Connections

42 Drain B

Gate A

Gate B

Note: Exposed backside of the package is

the source terminal for the transistors.

 Freescale Semiconductor, Inc., 2015. All rights reserved.