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MHT1002N Datasheet(PDF) 10 Page - NXP Semiconductors |
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MHT1002N Datasheet(HTML) 10 Page - NXP Semiconductors |
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10 / 20 page ![]() 10 RF Device Data Freescale Semiconductor, Inc. MHT1002NR3 MHT1002GNR3 TYPICAL CHARACTERISTICS — 915 MHz REFERENCE CIRCUIT 895 Gps f, FREQUENCY (MHz) Figure 9. Power Gain, Power Added Efficiency and Output Power versus Frequency at a Constant Input Power 18.5 22 330 68 66 64 62 360 350 340 PAE 21.5 20.5 905 915 VDD =48 Vdc Pin =3.0 W IDQ(A+B) = 100 mA Pout 21 20 19.5 19 910 900 935 920 925 930 0 0 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 10. Output Power versus Gate--Source Voltage 500 0.5 1 1.5 2 400 300 100 f = 915 MHz VDD =48 Vdc,Pin =3.0 W 0 0 Detail A f = 915 MHz Detail A VDD =48 Vdc Pin =1.5 W VGS, GATE--SOURCE VOLTAGE (VOLTS) 200 VDD =48 Vdc,Pin =1.5 W 2 0.5 60 80 100 4 2.5 40 20 1 VDD =48 Vdc Pin =3.0 W 3 3.5 1.5 Figure 11. Power Gain, Power Added Efficiency and Input Power versus Output Power and Frequency Pout, OUTPUT POWER (WATTS) 16 22 20 10 1000 Gps 7.5 10 0 2.5 28 26 24 10 70 90 100 Pin 18 30 14 12 50 30 5 PAE f = 928 MHz 915 MHz VDD =48 Vdc IDQ(A+B) = 100 mA 902 MHz 928 MHz 915 MHz 902 MHz 902 MHz 915 MHz 928 MHz |
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