PAM8901 datasheet(5/13 Pages) DIODES

5 / 13 page

PAM8901 / PAM8908

Document number: DS36456 Rev. 2 - 2

5 of 13

www.diodes.com

October 2016

PAM8901 / PAM8908

Electrical Characteristics (@TA = +25°C, PVDD = 3.6V, RL = 16Ω, unless otherwise specified.)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

PVDD

Supply Voltage

—

2.5

—

5.5

Quiescent Current

EN = PVDD, No Load

—

Output Power per Channel

THD = 1%, f = 1kHz, RL = 16Ω

—

THD = 1%, f = 1kHz, RL = 32Ω

—

ISD

Shutdown Current

EN = 0V, PVDD = 2.5V to 5.5V

—

0.1

µA

VIH

EN High Level Input Voltage

—

1.4

—

VIL

EN Low Level Voltage

—

0.6

VGH

G0, G1 High Level Input Voltage

—

1.4

—

VGL

G0, G1 Low Level Voltage

—

0.6

VOS

Output Offset Voltage

—

Closed-Loop Voltage Gain

G0 = 0V, G1 = 0V

—

-6

—

G0 = PVDD, G1 = 0V

—

G0 = 0V, G1 = PVDD

—

G0 = PVDD, G1 = PVDD

—

PSRR

Power Supply Rejection Ratio

Input A C-GND, f + 1kHz, VPP = 200mV

—

THD+N

Total Harmonic Distortion Plus Noise

PO = 20mW, f = 1kHz

—

0.03

—

SNR

Signal to Noise Ratio

PO = 20mW, into 16Ω

—

100

—

Noise Output Voltage

A-Weighted

—

µVRMS

Crosstalk

PO = 15mW, f = 1kHz

—

fOSC

Charge Pump Switching Frequency

—

1.2

1.5

1.8

MHz

tON

Start-Up Time

EN from low to high

—

0.4

—

OTP

Thermal Shutdown

Threshold

—

+150

—

°C

OTPH

Thermal Shutdown Hysteresis

Hysteresis

—

+20

—

°C

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