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STV5112 Datasheet(PDF) 3 Page - STMicroelectronics |
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STV5112 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 5 page ![]() ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDD Supply High Voltage Pin 5 250 V VCC Supply Low Voltage Pin 2 20 V IOD IOG Output Current to VDD to Ground Pins 7 - 10 - 13 Protected 8 mA IFD IFG Output Current < 50 µs duration to VDD to Ground Pins 9 - 12 - 15 45 45 mA mA Ij Input Current Pins 1 - 3 - 4 60 mA Tj Junction Temperature 150 °C Toper Operating Ambient Temperature 0, + 70 °C Tstg Storage Temperature - 20, + 150 °C THERMAL DATA Symbol Parameter Value Unit Rth(j-c) Junction-Case Thermal Resistance Max. 3 °C/W Rth(j-a) Junction-Ambient Thermal Resistance Typ. 35 °C/W ELECTRICAL CHARACTERISTICS VCC = 9V ; VDD = 240V ; Tamb = 25 oC ; AV = 55 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit VDD High Supply Voltage (Pin5) 220 240 V VCC Low Supply Voltage (Pin 2) 7.5 9 10 V IDD High Voltage Supply Internal DC Current (without current due to the feedback network) VOUT = 120V 9.5 15 mA ICC Low Voltage Supply Internal DC Current 38 55 mA Vsath Output Saturation Voltage (High level) (Pins 7-10-13) IO = - 10 µA 5 V RON Output Mos Transistor (Low level) (Pins 7-10-13) 1.7 k Ω BW Bandwidth at - 3dB Measured on CRT cathodes. (CLOAD = 10pF, RPROTECT = 1k Ω, VOUT = 120V, ∆ VOUT = 100VPP) 8 MHz tR, tF Rise & Fall Time Measured between 10% & 90% of output pulse (CLOAD = 10pF, RPROTECT = 1k Ω, VOUT = 120V, ∆ VOUT = 100VPP 50 ns GO Open Loop Gain 47 50 dB Open Loop Gain Difference between 2 channels -1.5 0 1.5 dB Open Loop Gain Temperature Coefficient 0 dB/ oC P Internal Power Dissipation (see calculation below) VOUT = 2MHz, 70VPP sine wave, VBLACK = 170V, CL = 20pF, RF = 68k Ω 3.6 W VREF Internal Voltage Reference (Pins 1-3-4) VOUT = 120V 2.3 2.5 2.7 V Voltage Reference Temperature Coefficient 0 mV/ °C IIB Input Bias Current (Pins 1-3-4) VOUT = 120V 75 µA RI Input Resistance 4 k Ω ESD ESD Human Body Model 1.2 kV STV5112 3/5 |
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