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PX607UZ Datasheet(PDF) 7 Page - NIKO SEMICONDUCTOR CO., LTD. |
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PX607UZ Datasheet(HTML) 7 Page - NIKO SEMICONDUCTOR CO., LTD. |
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7 / 7 page ![]() REV 1.2 7 I N- & P-Channel Enhancement Mode Field Effect Transistor PX607UZ SOT-563 Halogen-Free & Lead-Free NIKO-SEM single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 500 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA DC 100ms 10ms 1ms 0.01 0.1 1 10 0.1 1 10 100 NOTE : 1.VGS= -4.5V 2.TA=25 ˚C 3.R θJA = 500˚C/W 4.Single Pulse Operation in This Area is Limited by 0 0.2 0.4 0.6 0.8 1 0.001 0.01 0.1 1 10 100 Single Pulse R θJA = 500 ˚C/W TA=25 ˚C 0 0.9 1.8 2.7 3.6 4.5 0 0.3 0.6 0.9 1.2 VDS=-20V ID=-1A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-4.5V ID=-0.45A TJ , Junction Temperature( ˚C) On-Resistance VS Temperature Gate charge Characteristics Characteristics Qg , Total Gate Charge(nC) Safe Operating Area Single Pulse Maximum Power Dissipation Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve T1 , Square Wave Pulse Duration[sec] |
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