PX607UZ datasheet(2/7 Pages) NIKOSEM

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REV 1.2

N- & P-Channel Enhancement Mode

Field Effect Transistor

PX607UZ

SOT-563

Halogen-Free & Lead-Free

NIKO-SEM

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

RJA

N-ch

400

°C / W

Junction-to-Ambient

RJA

P-ch

500

1Pulse width limited by maximum junction temperature.

2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25°C.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

N-Ch

P-Ch

-20

VGS = 0V, ID = -250A

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

N-Ch

P-Ch

0.4

-0.4

0.75

-0.96

-1.2

VDS = VGS, ID = -250A

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±8V

N-Ch

P-Ch

±30

VDS = 0V, VGS = ±10V

Zero Gate Voltage Drain Current

IDSS

VDS = 16V, VGS = 0V

N-Ch

P-Ch

-1

A

VDS = -16V, VGS = 0V

VDS = 10V, VGS = 0V, TJ = 55 °C N-Ch

P-Ch

-10

VDS = -10V, VGS = 0V, TJ = 55 °C

Drain-Source On-State Resistance

RDS(ON)

VGS = 4.5V, ID = 0.5A

N-Ch

P-Ch

177

500

300

520

mΩ

VGS = -4.5V, ID = -0.45A

VGS = 2.5V, ID = 0.25A

N-Ch

P-Ch

226

770

400

800

VGS = -2.5V, ID = -0.1A

Forward Transconductance

gfs

VDS = 10V, ID = 0.5A

N-Ch

P-Ch

1.6

VDS = -10V, ID = -0.45A

PX607UZ Datasheet(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

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