TAT7472A1F

CATV 75

Ω pHEMT Dual RF Amplifier

Datasheet: Rev D 06-08-15

- 3 of 9 -

Disclaimer: Subject to change without notice

© 2014 TriQuint

www.triquint.com

TAT7472A1F-EB Evaluation Board Schematic

C1

C2

U1

R1

C3

R2

C4

C11

C12

C6

C7

T2

T1

R5

R4

L3

L6

C13

C9

L5

L4

C5

C8

+ VDD

+ VDD

+ VDD

+ VDD

C10

1

2

3

4

5

6

7

8

C14

C15

R3

RF OUT

RF IN

1

2

1

2

3

4

1

2

1

2

3

4

Current Adjustment

The TAT7472A1H current can be adjusted by R4 & R5. To optimize IMD distortion above 1GHz the device favors a higher

supply voltage than 5V. Applying a higher supply voltage will also raise the internal gate voltage at pins 1 & 4, which can be

brought down by these resistors, thereby lowering Idd. Since there is little benefit to higher current at higher voltage, lowering the

current to offers lower dissipation or the same dissipation as 5V operation.

5V

5.25V

5.5V

5.75V

6V

R4 & R5

10K Ω

166 mA

173 mA

185 mA

194 mA

205 mA

20K Ω

223 mA

237 mA

250 mA

263 mA

276 mA

30K Ω

252 mA

266 mA

280 mA

294 mA

309 mA

TAT7472A1F-EB Evaluation Board