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WNM2016 Datasheet(PDF) 4 Page - Will Semiconductor Ltd. |
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WNM2016 Datasheet(HTML) 4 Page - Will Semiconductor Ltd. |
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4 / 7 page ![]() WNM20 16 Typical Performance Graph Output Characteristics Rds(on) vs. Drain Current Rds(on) vs. Junction Temperature Transfer Characteristics Rds(on) vs. Gate to Source Voltage Threshold voltage vs. Temperature 0.0 0.5 1.0 1.5 2.0 2.5 0 4 8 12 16 20 V GS =2.0V V GS =3.0V to 5.0V V GS =1.5V V DS -Drain-to-source Voltage(V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.03 0.06 0.09 0.12 0.15 I D =3.5A V GS -Gate-to-source Voltage(V) -50 0 50 100 150 35 40 45 50 55 60 V GS =4.5V,I D =3.5A Temperature( oC) -50 0 50 100 150 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V DS =3.5V Temperature( oC) 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 T=-55 oC T=125 oC T=25 oC V GS -GATE-to-source Voltage(V) 02 4 6 8 10 0 40 80 120 160 VGS=4.0V VGS=2.0V VGS=1.5V I D -Drain Current(A) Will Semiconductor Ltd. 4 Mar.2018 – Rev.1.5 |
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