WNM2016 datasheet(5/7 Pages) WILLSEMI

5 / 7 page

WNM20

Capacitance

Single Pulse Power

Source to Drain Diode Forward Voltage

Safe Operating Area

150

300

450

600

=0V

F=1MHz

-Drain-to-source Voltage(V)

Ciss

Coss

Crss

Transient Thermal Response

0.3

0.4

0.5

0.6

0.7

0.8

0.0

0.5

1.0

1.5

2.0

-source-to-Drain Voltage(V)

0.01

0.1

100

1000

Time (s)

TA = 25 °C

VDS - Drain-to-Source Voltage (V)

0.1

TA = 25 °C

Single Pulse

1ms

10 ms

100 ms

0.01

100 s, DC

BVDSS Limited

100

100 μs

Limited by RDS(on)*

10 s

0.0001

0.001

0.01

0.1

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

t , TIME (sec)

(t) = r(t) * R

= 270 °C/W

Duty Cycle, D = t /t

θJA

T - T

= P * R

(t)

θJA

P(pk)

t 2

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

10-3

10-2

1000

10-1

10-4

100

0.2

0.1

0.05

Square Wave Pulse Duration (s)

0.1

0.01

Single Pulse

Notes:

PDM

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 70 °C/W

3. TJM -TA =PDMZthJA(t)

4. Surface Mounted

Duty Cycle = 0.5

0.02

Will Semiconductor Ltd.

Mar.2018 – Rev.1.5

WNM2016 Datasheet(PDF) 5 Page - Will Semiconductor Ltd.

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