WNM2016 datasheet(1/7 Pages) WILLSEMI

Part #	WNM2016

Description	N-Channel, 20V, 3.2A, Power MOSFET

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	WILLSEMI [Will Semiconductor Ltd.]

Direct Link	http://www.willsemi.com/index.php?siteid=2

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1 / 7 page

WNM20

16

WNM20

16

N-Channel, 20V, 3.2A, Power MOSFET

Descriptions

Features

Trench Technology

Supper high density cell design

Excellent ON resistance for higher DC current

Extremely Low Threshold Voltage

Small package SOT-23

Applications

Driver for Relay, Solenoid, Motor, LED etc.

DC-DC converter circuit

Power Switch

Load Switch

SOT-23

Configuration (Top View)

WT6*

WT6

= Device Code

*

= Month (A~Z)

Marking

Order Information

Device

Package

Shipping

WNM20

16-3/TR

SOT-23

3000/Tape&Reel

2

S

D

3

1

G

2

3

1

G

S

D

The WNM2016 is N-Channel enhancement MOS

Field Effect Transistor. Uses advanced trench

technology and design to provide excellent RDS (ON)

with low gate charge. This device is suitable for use

in DC-DC conversion, power switch and charging

circuit. Standard Product WNM2016 is Pb-free and

Halogen-free.

Will Semiconductor Ltd.

1

Mar.2018 – Rev.1.5

VDS (V)

Typical RDS(on) (mΩ)

20

40 @ VGS=4.5V

47 @ VGS=2.5V

55 @ VGS=1.8V

Http://www.sh-willsemi.com

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