WNM2016 datasheet(2/7 Pages) WILLSEMI

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WNM20

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 S

Steady State

Unit

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

±8

TA=25°C

3.2

2.9

Continuous Drain Current (TJ = 150 °C)

TA=70°C

2.5

2.3

TA=25°C

0.8

0.7

Maximum Power Dissipation

TA=70°C

0.5

0.4

TA=25°C

2.9

2.7

Continuous Drain Current (TJ = 150 °C)

TA=70°C

2.3

2.1

TA=25°C

0.6

0.5

Maximum Power Dissipation

TA=70°C

0.4

0.3

Pulsed Drain Current

IDM

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

10 s

125

150

Junction-to-Ambient Thermal Resistance

Steady State

R JA

140

175

10 s

150

180

Junction-to-Ambient Thermal Resistance

Steady State

R JA

165

210

Junction-to-Case Thermal Resistance

Steady State

R JC

°C/W

Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu.

Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu.

Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1%

Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

Will Semiconductor Ltd.

Mar.2018 – Rev.1.5

WNM2016 Datasheet(PDF) 2 Page - Will Semiconductor Ltd.

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