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2NP02 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2NP02 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 7 page ![]() SMD Type www.kexin.com.cn 1 MOSFET Complementary Trench MOSFET Features N-Channel VDS=20V ID=3.4A RDS(ON) 65m (VGS = 4.5V) RDS(ON) 75m (VGS = 2.5V) RDS(ON) 100m (VGS = 1.8V) P-Channel VDS=-20V ID=-2.5A RDS(ON) 75m (VGS =-4.5V) RDS(ON) 95m (VGS =-2.5V) RDS(ON) 115m (VGS =-1.8V) Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 Gate-Source Voltage VGS Continuous Drain Current Ta = 25 3.4 -2.5 Ta = 70 2.5 -2 Pulsed Drain Current IDM 13 -13 Power Dissipation Ta = 25 Ta = 70 Thermal Resistance.Junction- to-Ambient t 10s Steady-State Thermal Resistance.Junction- to-Lead Steady-State RthJL Junction Temperature TJ Storage Temperature Range Tstg ID A 150 -55 to 150 RthJA 150 PD W 1.1 V /W 110 80 8 0.7 G2 D2 S2 G1 D1 S1 n-channel p-channel G2 D2 S2 G1 D1 S1 -channel p-channel 1 2 3 4 5 6 SOT-23-6 () +0.01 -0.01 +0.2 -0.1 0.4 -0.1 +0.1 1.Gate1 4.Drain2 2.Source2 5.Source1 3.Gate2 6.Drain1 |
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