2NP02 datasheet(3/7 Pages) KEXIN

3 / 7 page

SMD Type

www.kexin.com.cn

MOSFET

Complementary Trench MOSFET

P-Channel Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250

A, VGS=0V

-20

VDS=-20V, VGS=0V

-1

VDS=-20V, VGS=0V, TJ=55

-5

Gate-Body leakage current

IGSS

VDS=0V, VGS=

100

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250

-0.4

-0.65

-1

VGS=-4.5V, ID=-2.5A

TJ=125

105

VGS=-2.5V, ID=-2A

VGS=-1.8V, ID=-1A

115

On state drain current

ID(ON)

VGS=-4.5V, VDS=-5V

-13

Forward Transconductance

gFS

VDS=-5V, ID=-2.5A

Input Capacitance

Ciss

560

745

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge (4.5V)

8.5

Gate Source Charge

Qgs

1.2

Gate Drain Charge

Qgd

2.1

Turn-On DelayTime

td(on)

7.2

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Maximum Body-Diode Continuous Current

-1.5

Diode Forward Voltage

VSD

IS=-1A,VGS=0V

-0.7

-1

VGS=-4.5V, VDS=-10V, RL=4

,RGEN=6

IF=-2.5A, dI/dt=100A/

Zero Gate Voltage Drain Current

IDSS

Static Drain-Source On-Resistance

RDS(On)

VGS=-4.5V, VDS=-10V, ID=-2.5A

VGS=0V, VDS=-10V, f=1MHz

Marking

2NP02 Datasheet(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

2NP02 Datasheet(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL