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AM5728 Datasheet(PDF) 187 Page - Texas Instruments |
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AM5728 Datasheet(HTML) 187 Page - Texas Instruments |
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187 / 415 page  187 AM5729, AM5728, AM5726 www.ti.com SPRS953F – DECEMBER 2015 – REVISED MAY 2019 Submit Documentation Feedback Product Folder Links: AM5729 AM5728 AM5726 Specifications Copyright © 2015–2019, Texas Instruments Incorporated (1) The IHHV1833 buffer exists in the dual-voltage IO logic that can be powered by either 1.8V or 3.3V provided by vddshv3. However, the vddshv3 supply is only used for input protection circuitry, not for logic functionality. The logic in this buffer operates entirely on the vdds18v supply. Therefore, IHHV control is asserted whenever the input is low and vdds18v is valid. 5.7.6 LVCMOS OSC Buffers DC Electrical Characteristics Table 5-14 summarizes the DC electrical characteristics for LVCMOS OSC Buffers. Table 5-14. LVCMOS OSC Buffers DC Electrical Characteristics PARAMETER MIN NOM MAX UNIT Signal Names in MUXMODE 0: rtc_osc_xi_clkin32 / rtc_osc_xo; Balls: AE14 / AD14; 1.8-V Mode VIH Input high-level threshold 0.65 * VDDS V VIL Input low-level threshold 0.35 * VDDS V VHYS Input hysteresis voltage 150 mV CPAD Pad capacitance (including package capacitance) 3 pF (1) VDDS stands for corresponding power supply (that is vdda_rtc). For more information on the power supply name and the corresponding ball, see Table 4-2, POWER [11] column. 5.7.7 BC1833IHHV Buffers DC Electrical Characteristics Table 5-15 summarizes the DC electrical characteristics for BC1833IHHV Buffers. Table 5-15. BC1833IHHV Buffers DC Electrical Characteristics PARAMETER MIN NOM MAX UNIT Signal Names in MUXMODE 0: on_off; Balls: Y11; 1.8-V Mode VOH Output high-level threshold (IOH = 2 mA) VDDS- 0.45 V VOL Output low-level threshold (IOL = 2 mA) 0.45 V IDRIVE Pin Drive strength at PAD Voltage = 0.45V or VDDS-0.45V 6 mA IIN Input current at each I/O pin 6 12 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ 6 µA CPAD Pad capacitance (including package capacitance) 4 pF 3.3-V Mode VOH Output high-level threshold (IOH =100 µA) VDDS-0.2 V VOL Output low-level threshold (IOL = 100 µA) 0.2 V IDRIVE Pin Drive strength at PAD Voltage = 0.45V or VDDS-0.45V 6 mA IIN Input current at each I/O pin 60 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ 60 µA CPAD Pad capacitance (including package capacitance) 4 pF |
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