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GD25VQ16CSFG Datasheet(PDF) 58 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25VQ16CSFG Datasheet(HTML) 58 Page - GigaDevice Semiconductor (Beijing) Inc. |
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58 / 59 page ![]() Uniform Sector Dual and Quad Serial Flash GD25VQ16C 58 11. REVISION HISTORY Version No Description Page Date 1.0 Initial Release --- 2015-7-23 1.1 Modify Command Read Security Registers (48H) --- 2015-10-20 1.2 Modify Package USON8 (3*2mm, thickness 0.45mm) Modify Package USON8 (4*3mm) Modify AC CHARACTERISTICS: tCHCL Min.0.2 V/ns Change to 0.1 V/ns tCLCH Min.0.2 V/ns Change to 0.1 V/ns Modify POWER-ON TIMING: tPUW Min 1ms Change to 5ms Modify Figure 40. Power-on Timing Sequence Diagram --- 2015-11-13 1.3 Modify AC CHARACTERISTICS: add tRST_R & tRST_P & tRST_E Modify POWER-ON TIMING: TVSL Min 10us Change to 5ms,VWI Min 1.9 Change to 1.5V Modify Package USON8 (2*3mm, thickness 0.45mm) Modify Package USON8 (2*3mm, thickness 0.55mm) --- 2016-01-29 1.4 Delete Package USON8(4*4mm, thickness 0.55mm) Add Package USON8(4*4mm, thickness 0.45mm) Modify fc1,fc2:2.7~3.6v change to 2.3~3.6v Modify Package USON8 (2*3mm, thickness 0.45mm) Modify Package USON8 (3*4mm) Modify Icc9 from 400~800uA to 0.6~1.2mA Modify tBE2 max. value from 0.6/0.8s to 0.6/1.2s Modify tw max. value from 30ms to 40ms --- 2017-08-02 1.5 Modify 4BH command Add “Page” column to the revision history Modify tVSL from 5ms to 1.8ms Add tRS, of which the min value is 100us Delete tRST_R and tRST_P Add tRST, of which the max. value is 30us Remove tSE,tBE1,tBE2 max. values for 50K cycling Modify tBE1 max.value from 0.7s to 1.2s Modify tBE2 max.value from 1.2s to 2s Update the description of all packages Delete DIP8 300mil,VSOP8 208mil,USON8 4*4mm-0.55 P32 P61 P42 P46 P46 P46 P46 P46 P46 P50-60 --- 2018-09-13 1.6 Modify VWI max value from 2.3V to 2.2V Update Ordering Information P42 P49 2019-2-26 |
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