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HMC8415LP6GETR Datasheet(PDF) 3 Page - Analog Devices |
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HMC8415LP6GETR Datasheet(HTML) 3 Page - Analog Devices |
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3 / 23 page  Data Sheet HMC8415LP6GE Rev. A | Page 3 of 23 SPECIFICATIONS ELECTRICAL SPECIFICATIONS TA = 25°C, VDDxA/VDDxB = 28 V, target quiescent current (IDQ) = 1000 mA, drain bias pulse width = 100 µs, 10% duty cycle, and the frequency range = 9 GHz to 10 GHz, unless otherwise noted. Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 9 10 GHz GAIN Small Signal 30 32.5 dB Small Signal Flatness 1 dB Power Gain 23 dB Input power (PIN) = 23 dBm 24 dB PIN = 21 dBm RETURN LOSS Input 20 dB Output 10 dB POWER Output Power POUT 46 dBm PIN = 23 dBm 45 dBm PIN = 21 dBm Power Added Efficiency PAE 40 % PIN = 23 dBm 37.5 % PIN = 21 dBm TARGET QUIESCENT CURRENT IDQ 1000 mA Adjust the VGG (VGGxA/VGGxB) between −4.0 V and −1.5 V to achieve an IDQ = 1000 mA typical, VGG (VGGxA/VGGxB) = −2.5 V typical to achieve IDQ = 1000 mA TA = 25°C, VDDxA/VDDxB = 28 V, IDQ = 1000 mA, drain bias pulse width = 100 µs, 10% duty cycle, and the frequency range = 10 GHz to 10.5 GHz, unless otherwise noted. Table 2. Parameter Symbol Min Typ Max Unit Test Conditions/Comments FREQUENCY RANGE 10 10.5 GHz GAIN Small Signal 25.5 28 dB Small Signal Flatness 5 dB Power Gain 22 dB PIN = 23 dBm 23.5 dB PIN = 21 dBm RETURN LOSS Input 17 dB Output 8 dB POWER Output Power POUT 45 dBm PIN = 23 dBm 44.5 dBm PIN = 21 dBm Power Added Efficiency PAE 37.5 % PIN = 23 dBm 37.5 % PIN = 21 dBm TARGET QUIESCENT CURRENT IDQ 1000 mA Adjust the VGG (VGGxA/VGGxB) between −4.0 V and −1.5 V to achieve an IDQ = 1000 mA typical, VGG (VGGxA/VGGxB) = −2.5 V typical to achieve IDQ = 1000 mA |
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