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HMC8415LP6GETR Datasheet(PDF) 21 Page - Analog Devices

Part # HMC8415LP6GETR
Description  GaN Power Amplifier
PDF  23 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

HMC8415LP6GETR Datasheet(HTML) 21 Page - Analog Devices

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Data Sheet
HMC8415LP6GE
Rev. A | Page 21 of 23
MAKING AVERAGE TO PULSED APPROXIMATIONS
To measure RF power, IDD, and PAE accurately in a pulsed
manner, use instruments offering pulse triggered measurements.
When pulse triggered instruments are not available but simpler
instruments with adequate averaging capabilities are, approximations
can be made with the understanding that the approximations
can result in lower accuracy of measurement. The most
common approximations involve measuring the average values
of parameters and then adjusting those values to account for the
duty cycle of operation. Approximating in this manner can
result in errors due to the limited measurement bandwidths of
the instruments and/or the inclusion of on/off transients and/or
partial periods in the measurement. So that partial periods do
not contribute significant errors to the measurements, perform
the averaging over a large number of pulse periods. The results
of such approximations can vary with the instruments and
settings used. Therefore, experimentation can be necessary to
achieve credible and repeatable results. When it is not possible
to make pulse triggered measurements, the only pulse connection
required is the one from the pulse generator to the J1 connector
of the pulsor (see Figure 49).
Depending on the implementation of the HMC8415LP6GE and
the pulsor into customer applications, adjustments of the pulse
circuit may be desired if the on and off transitions are accompanied
by excessive drain supply ringing. Synchronous with the drain
pulses, the VGGxx bias and RFIN signal can also be pulsed.
Unless otherwise noted, all measurement data shown within
this data sheet was taken using the typical application circuit
(see Figure 47) as implemented on the evaluation board (see
Figure 50), with the drain bias pulsed at 28 V by the pulsor
board (see Figure 48) to achieve the nominal IDQ of 1000 mA
at a pulse width of 100 µs, and 10% duty cycle. Operating at
different drain voltages or different drain quiescent currents
affects performance, as shown in the Typical Performance
Characteristics section. For applications having lower power
and gain requirements, operation at lower VDDxx and IDQ can
help reduce power consumption. Due to thermal considerations,
the use of lower duty cycles and shorter pulse widths can
sometimes result in improved power and PAE.



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