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HMC8415LP6GETR Datasheet(PDF) 20 Page - Analog Devices |
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HMC8415LP6GETR Datasheet(HTML) 20 Page - Analog Devices |
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20 / 23 page ![]() HMC8415LP6GE Data Sheet Rev. A | Page 20 of 23 RECOMMENDED BIAS SEQUENCE Power-Up Bias Concept for the EV1HMC8415LP6G with the Pulsor A proper set of dc bias conditions always requires that the gate be biased to a voltage that does not result in excessive drain current, regardless of whether the drain bias is constant or pulsed. For this reason, always apply a gate bias voltage to Pulsor J1-VG1 prior to the application of a voltage to Pulsor J1- VDD. VG1 = −6 V is considered a safe starting value. With a pulsed logic signal applied to Pulsor J1-PULSE and 28 V applied to Pulsor J1-VDD, a pulsed voltage between 0 V (for PULSE = logic low) and VDD = 28 V (for PULSE = logic high) becomes available at Pulsor J2-VDD_PULSE and Pulsor J3-VDD_PULSE and, therefore, at the drains of the device under test (DUT). When the gate bias voltage (applied to Pulsor J1-VG1) is available at the gates simultaneously with VDD_PULSE at the drains, a drain current proportional to VG1 flows. VG1 can be adjusted until the target pulsed IDQ is achieved. With this pulsor board, J1-VDD has a 35 V maximum above which damage can occur to the pulsor. The J1-PULSE and VDD_PULSE pulse width and duty cycle limits for reliable operation are as follows: Pulse width = 500 μs maximum Duty cycle = 20% maximum Power-Down Bias Concept for the EV1HMC8415LP6G with the Pulsor The power-down bias sequence follows from the power-up bias sequence. Bring Pulsor J1-PULSE to logic low to remove VDD_PULSE, and then power down Pulsor J1-VDD followed by powering down Pulsor J1-VG1. |
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