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HMC8415LP6GETR Datasheet(PDF) 20 Page - Analog Devices

Part # HMC8415LP6GETR
Description  GaN Power Amplifier
PDF  23 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

HMC8415LP6GETR Datasheet(HTML) 20 Page - Analog Devices

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HMC8415LP6GE
Data Sheet
Rev. A | Page 20 of 23
RECOMMENDED BIAS SEQUENCE
Power-Up Bias Concept for the EV1HMC8415LP6G with
the Pulsor
A proper set of dc bias conditions always requires that the gate
be biased to a voltage that does not result in excessive drain
current, regardless of whether the drain bias is constant or
pulsed. For this reason, always apply a gate bias voltage to
Pulsor J1-VG1 prior to the application of a voltage to Pulsor J1-
VDD. VG1 = −6 V is considered a safe starting value. With a
pulsed logic signal applied to Pulsor J1-PULSE and 28 V applied
to Pulsor J1-VDD, a pulsed voltage between 0 V (for PULSE =
logic low) and VDD = 28 V (for PULSE = logic high) becomes
available at Pulsor J2-VDD_PULSE and Pulsor J3-VDD_PULSE
and, therefore, at the drains of the device under test (DUT).
When the gate bias voltage (applied to Pulsor J1-VG1) is
available at the gates simultaneously with VDD_PULSE at the
drains, a drain current proportional to VG1 flows. VG1 can be
adjusted until the target pulsed IDQ is achieved. With this pulsor
board, J1-VDD has a 35 V maximum above which damage can
occur to the pulsor.
The J1-PULSE and VDD_PULSE pulse width and duty cycle
limits for reliable operation are as follows:
Pulse width = 500 μs maximum
Duty cycle = 20% maximum
Power-Down Bias Concept for the EV1HMC8415LP6G
with the Pulsor
The power-down bias sequence follows from the power-up bias
sequence. Bring Pulsor J1-PULSE to logic low to remove
VDD_PULSE, and then power down Pulsor J1-VDD followed
by powering down Pulsor J1-VG1.



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