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BUS98 Datasheet(PDF) 6 Page - ON Semiconductor

Part # BUS98
Description  SITCHMODE Series NPN Silicon Power Transistors
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BUS98 Datasheet(HTML) 6 Page - ON Semiconductor

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BUS98 BUS98A
6
Motorola Bipolar Power Transistor Device Data
The Safe Operating Area figures shown in Figures 12 and 13 are
specified for these devices under the test conditions shown.
30
Figure 12. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2
5
10
20
50
1000
10
1
0.5
0
Figure 13. Reverse Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
200
400
600
40
20
100
0.2
TC = 25°C
80
60
20
1000
BUS98
VBE(off) = 5 V
TC = 100°C
IC/IB1 ≥ 5
0
Figure 14. Power Derating
TC, CASE TEMPERATURE (°C)
40
80
120
40
0
100
80
60
20
200
SECOND BREAKDOWN
DERATING
160
THERMAL
DERATING
800
BUS98A
100
200
500
5
2
0.1
0.05
0.02
tr = 0.7 µs
BUS98
BUS98A
LIMIT
ONLY FOR
TURN ON
DC
1 ms
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 12 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC w 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 12 may be found at any case tem-
perature by using the appropriate curve on Figure 14.
TJ(pk) may be calculated from the data in Figure 11. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during re-
verse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an ava-
lanche mode. Figure 13 gives RBSOA characteristics.



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