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BUS98 Datasheet(PDF) 1 Page - ON Semiconductor

Part # BUS98
Description  SITCHMODE Series NPN Silicon Power Transistors
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BUS98 Datasheet(HTML) 1 Page - ON Semiconductor

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Motorola Bipolar Power Transistor Device Data
Designer's™ Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistors
The BUS98 and BUS98A transistors are designed for high–voltage, high–speed,
power switching in inductive circuits where fall time is critical. They are particularly
suited for line–operated switchmode applications such as:
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn–Off Times
60 ns Inductive Fall Time – 25
_C (Typ)
120 ns Inductive Crossover Time – 25
_C (Typ)
Operating Temperature Range – 65 to + 200
_C
100
_C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents (125
_C)
MAXIMUM RATINGS
Rating
Symbol
BUS98
BUS98A
Unit
Collector–Emitter Voltage
VCEO(sus)
400
450
Vdc
Collector–Emitter Voltage
VCEV
850
1000
Vdc
Emitter Base Voltage
VEB
7
Vdc
Collector Current — Continuous
— Peak (1)
— Overload
IC
ICM
IoI
30
60
120
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
10
30
Adc
Total Power Dissipation — TC = 25_C
— TC = 100_C
Derate above 25
_C
PD
250
142
1.42
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Case
R
θJC
0.7
_C/W
Maximum Lead Temperature
for Soldering Purposes:
1/8
″ from Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
x10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUS98/D
© Motorola, Inc. 1995
BUS98
BUS98A
30 AMPERES
NPN SILICON
POWER TRANSISTORS
400 AND 450 VOLTS
(BVCEO)
250 WATTS
850 – 1000 V (BVCES)
CASE 1–07
TO–204AA
REV 7


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