BUS98 datasheet(3/8 Pages) ONSEMI

Part #	BUS98

Description	SITCHMODE Series NPN Silicon Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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BUS98 BUS98A

Motorola Bipolar Power Transistor Device Data

DC CHARACTERISTICS

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

0.1

Figure 2. Collector Saturation Region

IC, COLLECTOR CURRENT (AMPS)

0.3

0.7

0.5

Figure 3. Collector–Emitter Saturation Voltage

IC, COLLECTOR CURRENT (AMPS)

0.7

0.3

0.1

Figure 4. Base–Emitter Voltage

IB, BASE CURRENT (AMPS)

0.1

0.3

0.5

VCE = 5 V

βf = 5

0.3

90%

10%

0.3

TC = 25°C

IC = 10 A

IC = 15 A

IC = 20 A

90%

10%

TJ = 25°C

TJ = 100°C

VR, REVERSE VOLTAGE (VOLTS)

100

1000

10k

100

– 0.4

Figure 5. Collector Cutoff Region

VBE, BASE–EMITTER VOLTAGE (VOLTS)

102

101

10 –1

Figure 6. Capacitance

104

103

100

– 0.2

0.2

0.4

0.6

VCE = 250 V

TJ = 150°C

125

°C

100

°C

REVERSE

FORWARD

TJ = 25°C

Cob

βf = 5

Cib

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