BUV48 BUV48A

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 200 mA, IB = 0) L = 25 mH

BUV48

VCEO(sus)

400

—

—

Vdc

(IC = 200 mA, IB = 0) L = 25 mH

BUV48

BUV48A

400

450

—

—

—

—

Collector Cutoff Current

(VCEX = Rated Value, VBE(off) = 1.5 Vdc)

(VCEX = Rated Value, VBE(off) = 1.5 Vdc, TC = 125_C)

ICEX

—

—

—

—

0.2

2

mAdc

Collector Cutoff Current

(VCE = Rated VCEX, RBE = 10 Ω)TC = 25_C

ICER

—

—

0.5

mAdc

(VCE = Rated VCEX, RBE = 10 Ω)TC = 25_C

TC = 125_C

—

—

—

—

0.5

3

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

IEBO

—

—

0.1

mAdc

Emitter–Base Breakdown Voltage

(IE = 50 mA – IC = 0)

V(BR)EBO

7

—

—

Vdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

IS/b

See Figure 12

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 13

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 10 Adc, VCE = 5 Vdc)

BUV48

(IC = 8 Adc, VCE = 5 Vdc)

BUV48A

hFE

8

8

—

—

—

—

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 2 Adc)

(IC = 15 Adc, IB = 3 Adc)

BUV48

(IC = 10 Adc, IB = 2 Adc, TC = 100_C)

(IC = 8 Adc, IB = 1.6 Adc)

(IC = 12 Adc, IB = 2.4 Adc)

BUV48A

(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)

VCE(sat)

—

—

—

—

—

—

—

—

—

—

—

—

1.5

5

2

1.5

5

2

Vdc

Base–Emitter Saturation Voltage

(IC = 10 Adc, IB = 2 Adc)

BUV48

(IC = 10 Adc, IB = 2 Adc, TC = 100_C)

(IC = 8 Adc, IB = 1.6 Adc)

BUV48A

(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C)

VBE(sat)

—

—

—

—

—

—

—

—

1.6

1.6

1.6

1.6

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

Cob

—

—

350

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time

IC =10A IB = 2 A

BUV48

td

—

0.1

0.2

µs

Rise Time

IC = 10 A, IB, = 2 A

BUV48

IC = 8 A, IB, = 1.6 A

BUV48A

tr

—

0.4

0.7

Storage Time

C

, B,

Duty Cycle

v 2%, VBE(off) = 5 V

Tp =30 µsVCC = 300 V

ts

—

1.3

2

Fall Time

Tp = 30 µs, VCC = 300 V

tf

—

0.2

0.4

Inductive Load, Clamped (Table 1)

Storage Time

I

10 A

BUV48

(TC =25_C)

tsv

—

1.3

—

µs

Fall Time

IC = 10 A

BUV48

IB1 = 2 A

(TC = 25_C)

tfi

—

0.06

—

Storage Time

IB1 = 2 A

IC 8 A

BUV48A

tsv

—

1.5

2.5

Crossover Time

IC = 8 A

BUV48A

IB1 = 1.6 A

(TC = 100_C)

tc

—

0.3

0.6

Fall Time

IB1 1.6 A

tfi

—

0.17

0.35

(1) Pulse Test: Pulse Width = 300

µs, Duty Cycle v 2%.

Vcl = 300 V, VBE(off) = 5 V, Lc = 180 µH