BUV48 datasheet(3/8 Pages) ONSEMI

Part #	BUV48

Description	SITCHMODE II Series NPN Silicon Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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BUV48 BUV48A

Motorola Bipolar Power Transistor Device Data

DC CHARACTERISTICS

0.1

IC, COLLECTOR CURRENT (AMPS)

0.3

0.7

0.5

IC, COLLECTOR CURRENT (AMPS)

0.7

0.5

0.3

0.2

0.3

IC = 5 A

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

8 10

Figure 2. Collector Saturation Region

0.1

IB, BASE CURRENT (AMPS)

0.1

0.3

0.5

0.3

VCE = 5 V

TJ = 150°C

Figure 3. Collector–Emitter Saturation Voltage

Figure 4. Base–Emitter Voltage

Figure 5. Collector Cutoff Region

– 0.4

Figure 6. Capacitance

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10–1

– 0.2

0.2

0.4

0.6

10 k

VR, REVERSE VOLTAGE (VOLTS)

1 k

100

1000

100

FORWARD

0.1

VCE = 250 V

125

°C

90%

°C

7.5 A

TJ = 100°C

REVERSE

101

102

103

104

Cob

βf = 5

°C

10%

TC = 25°C

10 A

15 A

90%

10%

TJ = 25°C

βf = 5

100

°C

Cib

TJ = 25°C

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