BUV48 datasheet(4/8 Pages) ONSEMI

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BUV48 BUV48A

Motorola Bipolar Power Transistor Device Data

Table 1. Test Conditions for Dynamic Performance

VCEO(sus)

RBSOA AND INDUCTIVE SWITCHING

RESISTIVE SWITCHING

PW Varied to Attain

IC = 200 mA

Lcoil = 25 mH, VCC = 10 V

Rcoil = 0.7 Ω

Lcoil = 180 µH

Rcoil = 0.05 Ω

VCC = 20 V

VCC = 300 V

RL = 83 Ω

Pulse Width = 10

µs

INDUCTIVE TEST CIRCUIT

TURN–ON TIME

IB1 adjusted to

obtain the forced

hFE desired

TURN–OFF TIME

Use inductive switching

driver as the input to

the resistive test circuit.

t1 Adjusted to

Obtain IC

Test Equipment

Scope — Tektronix

475 or Equivalent

RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

IB1

Vclamp = 300 V

RB ADJUSTED TO ATTAIN DESIRED IB1

+10 V

220

100

680 pF

100

PULSES

δ = 3%

2 W

160

µF

680 pF

MM3735

1N4934

D1 D2 D3 D4

2N3763

160

680 pF

0.22

µF

2N6438

+10 V

MR854

0.1

µF

2N6339

MR854

Ib1 ADJUST

dTb ADJUST

Ib2 ADJUST

VCC

INPUT

Rcoil

Lcoil

VCC

Vclamp

RS =

0.1

Ω

1N4937

EQUIVALENT

TUT

SEE ABOVE FOR

DETAILED CONDITIONS

VCE

IC(pk)

tf Clamped

TIME

VCE or

Vclamp

t1 ≈

Lcoil (IC

)

VCC

t2 ≈

Lcoil (IC

)

VClamp

TUT

VCC

trv

VBE(off), BASE–EMITTER VOLTAGE (VOLTS)

TIME

Figure 7. Inductive Switching Measurements

Figure 8. Peak–Reverse Current

βf = 5

IC = 10 A

VCE

90% IB1

tsv

IC pk

VCE(pk)

90% VCE(pk)

90% IC(pk)

10% VCE(pk) 10%

IC pk

2% IC

tfi

tti

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