EPC8009 datasheet(2/7 Pages) EPC

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eGaN® FET DATASHEET

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EPC8009

Figure 1: Typical Output Characteristics at 25°C

DS– Drain-to-Source Voltage (V)

0.5

1.5

2.5

VGS

= 5

V = 4

V = 3

V = 2

GS– Gate-to-Source Voltage (V)

0.5

1.5

2.5

3.5

4.5

Figure 2: Transfer Characteristics

25˚C

125˚C

VDS = 3 V

350

300

250

200

400

150

100

GS– Gate-to-Source Voltage (V)

2.0

2.5

3.0

3.5

4.5

4.0

5.0

Figure 3: RDS(on) vs.VGS forVariousDrainCurrents

D= 0.5 A

D= 1.0 A

D= 1.5 A

D= 2.0 A

350

300

250

400

200

150

100

GS– Gate-to-Source Voltage (V)

2.5

3.5

4.5

Figure 4: RDS(on) vs.VGS forVariousTemperatures

25˚C

125˚C

= 1 A

Dynamic Characteristics (TJ= 25˚C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

CISS

Input Capacitance

VGS = 0 V, VDS = 32.5 V

COSS

Output Capacitance

CRSS

Reverse Transfer Capacitance

0.5

0.8

Gate Resistance

0.3

Total Gate Charge

VDS = 32.5 V, VGS = 5 V, ID = 1 A

370

450

QGS

Gate-to-Source Charge

120

QGD

Gate-to-Drain Charge

QG(TH)

Gate Charge at Threshold

QOSS

Output Charge

VGS = 0 V, VDS = 32.5 V

940

1400

QRR

Source-Drain Recovery Charge

Specifications are with substrate connected to source where applicable.

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