eGaN® FET DATASHEET

EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |

| 4

EPC8009

0.4

0.3

0.2

0.1

RF Café

2002

6.0

8.0

10

5.0

4.0

20

3 GHz

200 MHz

S11 – Gate Reection

S22 – Drain Reection

EPC8009

3 GHz

200 MHz

Figure 11: Smith Chart

S-Parameter Characteristics

Figure 12: Gain Chart

Figure 13: Device Reflection

Figure 14: Taper and Reference Plane details – Device Connection

Frequency

[MHz]

[Ω]

[Ω]

200

1.98 – j8.58

16.83 – j11.29

500

1.87 – j2.15

10.69 – j9.69

1000

1.39 + j2.14

5.22 – j5.45

1200

1.21 + j3.56

3.53 – j3.42

1500

1.01 + j4.96

2.35 – j0.81

2000

0.83 + j7.83

1.57 + j3.52

2400

0.73 + j10.14

1.54 + j6.19

3000

0.58 + j14.27

1.84 + j10.20

S-Parameter Table - Download S-parameter files at www.epc-co.com

Gate Circuit

Reference Plane

Drain Circuit

Reference Plane

Device Outline

914

149

All dimensions in µm

914

355

0

5

10

15

20

25

30

35

40

45

–0.2

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

100

1000

Amplitude

Gmax

[dB]

Frequency (MHz)

25˚C

125˚C

1.2

1.4

1

0.6

0.8

0.4

0.2

0

1

0

3

2

4

5

6

Figure 10: Gate Current

V

Micro-Strip design: 2-layer

½ oz (17.5 µm) thick copper

30 mil thick RO4350 substrate

All measurements were done with substrate shortened to source.