S8233C datasheet(5/26 Pages) SII

5 / 26 page

BATTERY PROTECTION IC FOR 3-SERIAL-CELL PACK

Rev.4.0_00

S-8233C Series

Seiko Instruments Inc.

Electrical Characteristics

Table 4 (1 / 2)

(Ta

= 25 °C unless otherwise specified)

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Measure-

ment

condition

Measure-

ment

circuit

Detection voltage

Over charge detection voltage 1

VCU1

3.80 to 4.40 Adjustment

VCU1-0.05

VCU1

VCU1+0.05

Over charge release voltage 1

VCD1

3.45 to 4.40 Adjustment

VCD1-0.10

VCD1

VCD1+0.10

Over discharge detection voltage 1

VDD1

2.00 to 2.80 Adjustment

VDD1-0.08

VDD1

VDD1+0.08

Over discharge release voltage 1

VDU1

2.00 to 4.00 Adjustment

VDU1-0.10

VDU1

VDU1+0.10

Over charge detection voltage 2

VCU2

3.80 to 4.40 Adjustment

VCU2-0.05

VCU2

VCU2+0.05

Over charge release voltage 2

VCD2

3.45 to 4.40 Adjustment

VCD2-0.10

VCD2

VCD2+0.10

Over discharge detection voltage 2

VDD2

2.00 to 2.80 Adjustment

VDD2-0.08

VDD2

VDD2+0.08

Over discharge release voltage 2

VDU2

2.00 to 4.00 Adjustment

VDU2-0.10

VDU2

VDU2+0.10

Over charge detection voltage 3

VCU3

3.80 to 4.40 Adjustment

VCU3-0.05

VCU3

VCU3+0.05

Over charge release voltage 3

VCD3

3.45 to 4.40 Adjustment

VCD3-0.10

VCD3

VCD3+0.10

Over discharge detection voltage 3

VDD3

2.00 to 2.80 Adjustment

VDD3-0.08

VDD3

VDD3+0.08

Over discharge release voltage 3

VDU3

2.00 to 4.00 Adjustment

VDU3-0.10

VDU3

VDU3+0.10

Over current detection voltage 1

VIOV1 0.15 to 0.50V Adjustment VIOV1×0.9

VIOV1

VIOV1×1.1

Over current detection voltage 2

VIOV2

VCC Reference

0.54

0.6

0.66

Over current detection voltage 3

VIOV3

VSS Reference

1.0

2.0

3.0

Voltage temperature factor 1

TCOE1

Ta=-20 to 70°C

-1.0

1.0

mV/°C

−

Voltage temperature factor 2

TCOE2

Ta=-20 to 70°C

-0.5

0.5

mV/°C

−

Delay time

Over charge detection delay time 1

tCU1

CCCT=0.47

µF

0.5

1.0

1.5

Over charge detection delay time 2

tCU2

CCCT=0.47

µF

0.5

1.0

1.5

Over charge detection delay time 3

tCU3

CCCT=0.47

µF

0.5

1.0

1.5

Over discharge detection delay time 1

tDD1

CCDT=0.1

µF

Over discharge detection delay time 2

tDD2

CCDT=0.1

µF

Over discharge detection delay time 3

tDD3

CCDT=0.1

µF

Over current detection delay time 1

tIOV1

CCOVT=0.1

µF

Over current detection delay time 2

tIOV2

−

Over current detection delay time 3

tIOV3

FET gate capacitor

=2000 pF

100

300

550

µs

Operating voltage

Operating voltage between VCC and

VSS

VDSOP

−

2.0

−

Current consumption

Current consumption (during normal

operation)

IOPE

V1=V2=V3=3.5 V

−

µA

Current consumption for cell 1

ICELL1

V1=V2=V3=3.5 V

−300

300

Current consumption for cell 2

ICELL2

V1=V2=V3=3.5 V

−300

300

Current consumption for cell 3

ICELL3

V1=V2=V3=3.5 V

−300

300

Current consumption at power down

IPDN

V1=V2=V3=1.5 V

−

0.1

µA

Internal resistance with 0V battery charging function type

Resistance between VCC and VMP

RVCM

V1=V2=V3=3.5 V

0.20

0.50

0.80

Ω

Resistance between VSS and VMP

RVSM

V1=V2=V3=1.5 V

0.20

0.50

0.80

Ω

Internal resistance without 0V battery charging function type.

Resistance between VCC and VMP

RVCM

V1=V2=V3=3.5 V

0.40

0.90

1.40

Ω

Resistance between VSS and VMP

RVSM

V1=V2=V3=1.5 V

0.40

0.90

1.40

Ω

Input voltage

CTL"H" Input voltage

VCTL(H)

−

VCC x 0.8

−

CTL"L" Input voltage

VCTL(L)

−

VCC x 0.2

−

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