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LT4256-3IGN Datasheet(PDF) 15 Page - Linear Technology |
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LT4256-3IGN Datasheet(HTML) 15 Page - Linear Technology |
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15 / 20 page ![]() LT4256-3 15 42563f This open FET condition can be falsely signalled during start-up if the load is not activated until after PWRGD goes high. To avoid this false indication, OPEN and PWRGD should not be polled for a period of time, tSTARTUP, given by: t VC A STARTUP CC = µ 31 30 •• (9) This can be accomplished either by a microcontroller (if available) or by placing an RC filter as shown in Figure 13. Once the OPEN voltage exceeds the monitoring logic thresh- old, VTHRESH, and PWRGD is low, an open FET condition is signalled. In order to prevent a false indication, the RC product should be set with the following equation: RC VC A V VV CC LOGIC LOGIC THRESH > µ 31 30 •• ln – (10) Another condition that can cause a false indication is if the LT4256-3 goes into current limit during start-up. This will cause tSTARTUP to be longer than calculated. Also, if the LT4256-3 stays in current limit long enough for TIMER to fully charge up to its threshold, the LT4256-3 will either latch off (RETRY = 0) or go into the current limit hiccup mode (RETRY = floating). In either case, an open FET condition will be falsely signalled. If the LT4256-3 does go into current limit during start-up, C1 can be increased (see Power-Up Sequence). APPLICATIO S I FOR ATIO Supply Transient Protection The LT4256-3 is 100% tested and guaranteed to be safe from damage with supply voltages up to 80V. However, voltage transients above 100V may cause permanent damage. During a short-circuit condition, the large change in currents flowing through the power supply traces can cause inductive voltage transients which could exceed 100V. To minimize the voltage transients, the power trace parasitic inductance should be minimized by using wider traces or heavier trace plating and a bypass capacitor should be placed between VCC and GND. A surge suppres- sor (TransZorb ®) at the input can also prevent damage from voltage transients. GATE Pin A curve of gate drive vs VCC is shown in Figure 14. GATE is clamped to a maximum voltage of 12.8V above VOUT. This clamp is designed to withstand the internal charge pump current. An external Zener diode must be used as shown in all applications. At a minimum input supply voltage of 10.8V, the minimum gate drive voltage is 4.5V. When the input supply voltage is higher than 20V, the gate drive voltage is at least 10V and a standard threshold MOSFET can be used. In applications from 12V to 15V range, a logic level MOSFET must be used. Figure 13. Delay Circuit for OPEN FET Detection 4 R C 4256 F13 OPEN LT4256-3 TO MONITORING LOGIC VLOGIC INTERNAL OPEN COLLECTOR PULL-DOWN Figure 14. ∆VGATE vs VCC VCC (V) 10 3 4 6 7 8 13 10 30 50 60 4256 F14 5 11 12 9 20 40 70 80 TransZorb is a registered trademark of General Instruments, GSI. |
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