Electrical Characteristics
Version 1.4, March 6, 2003
Proprietary to OmniVision Technologies
5
Omni ision
Electrical Characteristics
NOTE:
Exceeding the Absolute Maximum ratings shown above invalidates all AC and DC electrical specifications and may
result in permanent device damage.
Table 2
Absolute Maximum Ratings
Ambient Storage Temperature
-40ºC to +125ºC
Supply Voltages (with respect to Ground)
VDD-A
3V
VDD-C
3V
VDD-IO
4V
All Input/Output Voltages (with respect to Ground)
-0.3V to VDD_IO+1V
Lead Temperature, Surface-mount process
+230ºC
ESD Rating, Human Body model
2000V
Table 3
DC Characteristics (0°C < TA < 70°C)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
VDD-A
DC supply voltage – Analog
—
2.40
2.5
2.60
V
VDD-C
DC supply voltage – Core
—
2.25
2.5
2.75
V
VDD-IO
DC supply voltage – I/O
—
2.25
—
3.3
V
IDDA
Active (Operating) Current
See Note a
a.
VDD-A = VDD-C = 2.5V, VDD-IO = 3.0V
IDDA = {IDD-IO+ IDD-C + IDD-A}, fCLK = 24MHz at 30 fps, no I/O loading
15
mA
IDDS-SCCB
Standby Current
See Note b
b.
VDD-A = VDD-C = 2.5V, VDD-IO = 3.0V
IDDS:SCCB refers to a SCCB-initiated Standby, while IDDS:PWDN refers to a PWDN pin-initiated Standby
1mA
IDDS-PWDN
Standby Current
10
μA
VIH
Input voltage HIGH
CMOS
0.7 x VDD-IO
V
VIL
Input voltage LOW
0.3 x VDD-IO
V
VOH
Output voltage HIGH
CMOS
(IOH / IOL)
0.9 x VDD-IO
V
VOL
Output voltage LOW
0.1 x VDD-IO
V
IOH
Output current HIGH
See Note c
c.
Standard Output Loading = 25pF, 1.2K
to 3V
8mA
IOL
Output current LOW
15
mA
IL
Input/Output Leakage
GND to VDD-IO
± 1
μA
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