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IR2011SPBF Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IR2011SPBF Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 18 page  IR2011(S)PBF 1 www.irf.com © 2015 International Rectifier April 14, 2015 High and Low Side Driver Ordering Information Features Floating channel designed for bootstrap operation Fully operational to 200V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 to 20V Independent low and high side channels Input logic HIN/LIN active high Undervoltage lockout for both channels 3.3V and 5V logic compatible CMOS Schmitt-triggered inputs with pull-down Matched propagation delay for both channels Description The IR2011 is a high power, high speed power MOSFET driver with independent high and low side referenced output channels. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Applications Converters DC motor drive Product Summary VOFFSET (max) 200V IO+/- (typ) 1.0A / 1.0A VOUT 10 – 20V ton/off (typ) Delay Matching (max) 80ns & 60ns 20ns Package Options 8-Lead PDIP 8-Lead SOIC Base Part Number Package Type Standard Pack Orderable Part Number Form Quantity IR2011PBF PDIP8 Tube 50 IR2011PBF IR2011SPBF SO8N Tube 95 IR2011SPBF IR2011SPBF SO8N Tape and Reel 2500 IR2011STRPBF |
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