MPT612 datasheet(21/37 Pages) NXP

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NXP Semiconductors

MPT612

Maximum power point tracking IC

MPT612

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Product data sheet

Rev. 2 — 14 September 2010

21 of 21

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Ipu

pull-up current

VI = 0 V

[13]

−15

−50

−85

VDD(IO) < VI < 5 V

[12]

IDDC

core supply current

Active mode;

code while (1){}

executed from flash; all

peripherals enabled via PCONP

CCLK = 70 MHz

VDDC = 1.8 V; Tamb = 25 °C

Power-down mode;

VDDC = 1.8 V; Tamb = 25 °C

2.5

VDDC = 1.8 V; Tamb = 85 °C

105

Deep power-down mode

RTC off; SRAM off;

Tamb = 25 °C

VDD(RTC) = 3.3 V; VDDC = 1.8 V

0.7

IDD(RTC)

RTC supply current

Active mode

CCLK = 70 MHz;

PCLK = 12.5 MHz; PCLK

enabled to RTCK; RTC

clock = 32 kHz (from RTCX pins);

Tamb = 25 °C

[14]

VDDC = 1.8 V; VDD(RTC) = 3.0 V

Power-down mode RTC

clock = 32 kHz (from RTCX pins);

Tamb = 25 °C

VDDC = 1.8 V; VDD(RTC) = 2.5 V

VDDC = 1.8 V; VDD(RTC) = 3.0 V

Deep power-down mode

RTC off; SRAM off;

Tamb = 25 °C

VDDC = 1.8 V; VDD(RTC) = 3.0 V

2C-bus pins

VIH

HIGH-level input

voltage

0.7 VDD(IO)

VIL

LOW-level input

voltage

0.3

VDD(IO)

Vhys

hysteresis voltage

0.5 VDD(IO)

VOL

LOW-level output

voltage

IOLS = 3 mA

[10]

0.4

ILI

input leakage current

VI = VDD(IO)

VI = 5 V

[15]

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