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IRF7335D1 Datasheet(PDF) 2 Page - International Rectifier

Part # IRF7335D1
Description  Dual FETKY CO-PACKAGED DUAL MOSFET PLUS SCHOTTKY DIODE
PDF  12 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7335D1 Datasheet(HTML) 2 Page - International Rectifier

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IRF7335D1
2
www.irf.com
Parameter
Min
Typ
Max
Min
Typ
Max Units
Conditions
Continuous Source Current
I
S
10
10
A
MOSFET symbol
(Body Diode)
showing the
Pulse Source Current
I
SM
81
81
intergral reverse
(Body Diode)
p-n junction diode
Diode Forward Voltage
V
SD
1
1.25
0.43
0.50
V
T
J = 25°C, IS = 1.0A,VGS= 0V
Reverse Recovery Time
t
rr
28
31
ns
T
J = 125°C, IF = 8.0A, VR= 15V
Reverse Recovery Charge
Q
rr
24
26
nC
di/dt = 100A/µs
Reverse Recovery Time
t
rr
29
31
ns
T
J = 125°C, IF =8.0A, VR= 15V
Reverse Recovery Charge
Q
rr
26
26
nC
di/dt =100A/µs
Parameter
Min
Typ
Max
Min
Typ
Max Units
Conditions
Drain-to-Source
BV
DSS
30
30
V
V
GS = 0V, ID = 250µA
Breakdown Voltage
Static Drain-Source
R
DS(on)
13.4
17.5
9.6
12.8
m
Ω V
GS = 4.5V, ID = 10A‚
on Resistance
Gate Threshold Voltage
V
GS(th)
1.0
1.1
V
V
DS = VGS,ID = 250µA
Drain-Source Leakage
I
DSS
30
30
µA
V
DS = 24V, VGS = 0
0.3
10
mA
V
DS = 24V, VGS = 0, Tj = 125°C
Gate-Source Leakage
I
GSS
±100
±100
nA
V
GS = ±12V
Current
Forward Transconductance
g
FS
21
28
S
V
GS
=5V, I
D
=8.0A, V
DS
=15V
Total Gate Charge
Q
G
13
20
18
27
V
GS=4.5V,
I
D=8.0A, VDS=15V
Pre-Vth
Q
GS1
3.2
5.8
Gate-Source Charge
Post-Vth
Q
GS2
1.4
1.5
nC
Gate-Source Charge
Gate to Drain Charge
Q
GD
4.1
4.9
Switch Chg(Q
gs2 + Qgd)
Q
sw
5.5
6.4
Output Charge
Q
oss
7.7
11
nC
V
DS = 16V, VGS = 0
Gate Resistance
R
G
4.3
10
2.6
5.0
Ω
Turn-on Delay Time
t
d (on)
6.8
8.8
V
DD = 16V, ID = 8.0A
Rise Time
t
r
5.9
3.3
ns
V
GS = 4.5V
Turn-off Delay Time
t
d (off)
19
17
Clamped Inductive Load
Fall Time
t
f
9.1
7.0
Input Capacitance
C
iss
1500
2300
Output Capacitance
C
oss
310
450
pF
V
DS = 15V, VGS = 0
Reverse Transfer Capacitance
C
rss
140
180
Electrical Characteristics
Source-Drain Rating & Characteristics
& Schottky
Current
Q1-Control FET
Q2-Synch FET
Breakdown Voltage
∆BV
DSS/∆
T
J 0.025
0.033
V
Reference to 25°C, I
D = 1.0mA
Tem. Coefficient
S
D
G



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