Dual Path Lowband RF Receiver

400 MHz to 1100 MHz

Glitch-Free

2

Rev 1, April 2015

IDTF1130NBGI

Datasheet

Parameter

Symbol

Min

Max

Units

VCC to GND

-0.3

+5.5

V

SPI DATA, SPI LE, SPI CLK,

STBY_A, STBY_B

-0.3

V

IFOUT_A+, IFOUT_A-,

IFOUT_B+, IFOUT_B-,

1.00

V

LO_IN, RFIN_A, RFIN_B,

MIXRFIN_A, MIXRFIN_B

-0.3

+0.30

V

LO_BIAS

+2.1

+4.0

V

RFA_BIAS, RFB_BIAS

-0.3

+1.50

V

RFAMP_BIAS, IFA_BIAS, IFB_BIAS

-0.3

+2.20

V

Maximum RF Input Power – Bypass OFF

+24

dBm

Maximum RF Input Power – Bypass ON

+24

dBm

Maximum RF Input Power to Mixer

+21

dBm

Continuous Power Dissipation

2.15

W

Junction Temperature

+150

°C

Storage Temperature Range

-65

+150

°C

Lead Temperature (soldering, 10s)

+260

°C

ElectroStatic Discharge – HBM

(JEDEC/ESDA JS-001-2012)

2000

(Class 2)

Volts

ElectroStatic Discharge – CDM

(JEDEC 22-C101F)

250

(Class C3)

Volts

Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at

these or any other conditions above those indicated in the operational section of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

This product features proprietary protection circuitry. However, it may be damaged if subjected to

high energy ESD. Please use proper ESD precautions when handling to avoid damage or loss of

32 °C/W

3 °C/W

Moisture Sensitivity Rating (Per J-STD-020)

MSL1