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FTK7002EN Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTK7002EN Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page ![]() 10000/Tape&Reel ORDERING INFORMATION Small Signal MOSFET 30 V, 154 mA, Single, N −Channel, Gate ESD Protection, SC −89 Features • Low Gate Charge for Fast Switching • Small 1.6 X 1.6 mm Footprint • ESD Protected Gate • Applications • Power Management Load Switch • Level Shift • Portable Applications such as Cell Phones, Media Players, Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc. We declare that the material of product is ROHS compliant and halogen free. Device Shipping 3000/Tape&Reel FTK7002EN FTK7002EN Marking MARKING DIAGRAM TF = Specific Device Code D = Date Code T6 D 1 3 2 (Top View) Drain Gate 3 1 2 Source MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS 10 V Continuous Drain Current (Note 1) Steady State = 25 C ID 154 mA Power Dissipation (Note 1) Steady State = 25 C PD 300 mW Pulsed Drain Current tP 10 s IDM 618 mA Operating Junction and Storage Temperature TJ, TSTG −55 to 150 C Continuous Source Current (Body Diode) ISD 154 mA Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 C THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient – Steady State (Note 1) R JA 416 C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). T6 T6 SEMICONDUCTOR TECHNICAL DATA FTK7002EN 2009. 10. 28 1/5 Revision No : 0 1 3 2 SC-89 |
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