2014. 04. 10

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SEMICONDUCTOR

TECHNICAL DATA

FTK7002K

Revision No : 0

RK

RK

=Device Code

W

=Month Code

MARKING DIAGRAM

& PIN ASSIGNMENT

3

2

1

Gate

Source

Drain

3

2

1

(Top View)

Simplified Schematic

1

3

2

SOT– 23 (TO–236AB)

N–Channel SOT–23

•

Small Signal MOSFET 380 mAmps, 60 Volts

compliance with RoHS requirements.

Features

DS(on)

Applications

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

60

V

Gate−to−Source Voltage

±20

V

Drain Current (Note 1)

Steady State

T

s

5

<

t

320

230

380

270

mA

Power Dissipation (Note 1)

Steady State

t < 5 s

300

420

mW

1.5

A

Operating Junction and Storage

Temperature Range

−55 to

+150

°C

Source Current (Body Diode)

300

mA

Lead Temperature for Soldering Purposes

(1/8″ from case for 10s)

260

°C

Gate−Source ESD Rating

(HBM, Method 3015)

ESD

2000

V

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Junction−to−Ambient − Steady State

(Note 1)

417

°C/W

Junction−to−Ambient − t ≤ 5 s (Note 1)

300

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in

sq [1 oz] including traces)

Device

Marking

Shipping

ORDERING INFORMATION

3000 Tape & Reel

FTK7002K

RK