FTK7002K datasheet(2/6 Pages) FS

2 / 6 page

2014. 04. 10

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FTK7002K

Revision No : 0

ELECTRICAL CHARACTERISTICS

(TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID= 250 A

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

mV/℃

Zero Gate Voltage Drain Current

IDSS

VGS = 0V,

VDS = 60V

TJ = 25℃

TJ = 125℃

500

VGS = 0V,

VDS = 50V

TJ = 25℃

100

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20V

±10

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, I D= 250 A

1.0

2.5

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

4.0

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V, ID= 500 mA

2.3

VGS = 5.0 V, ID= 50 mA

2.7

Forward Transconductance

gFS

VDS = 5 V, ID= 200 mA

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz,

VDS = 25 V

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS= 10 V;

ID = 500 mA

Threshold Gate Charge

QG(TH)

Gate−to−Source Charge

QGS

Gate−to−Drain Charge

QGD

SWITCHING CHARACTERISTICS, V GS = V (Note 3)

Turn−On Delay Time

td(ON)

Rise Time

Turn−Off Delay Time

td(OFF)

Fall Time

DRAIN −SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 115 mA

TJ = 25℃

1.4

TJ = 85℃

0.7

2. Pulse Test: pulse width≤300us, duty cycle ≤ 2%

3. Switching characteristics are independent of operating junction temperatures

2.2

0.71

0.1

0.32

0.16

3.8

3.4

VDS = 10 V, VGEN= 10 V,

I D = 500 mA

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