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IRF730 Datasheet(PDF) 5 Page - First Silicon Co., Ltd

Part # IRF730
Description  6.0A, 400V, 1.0廓 N-CHANNEL POWER MOSFET
PDF  6 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

IRF730 Datasheet(HTML) 5 Page - First Silicon Co., Ltd

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TYPICAL PERFORMANCE CUVES
(Unless Otherwise Specified)
Case Temperature, TC ( C)
75
100
150
Maximum ContionuousDrain Currentvs. Case
Temperature
0
125
50
25
2
4
6
100
10
0 1
Drain to Source Voltage, VDS (V)
Forward Bias Safe Operating Area
100
10
1
DC
1
1ms
1000
10 s
10ms
TC=25 C
TJ=Max Rated
Single Pulse
100 s
Operation in This Area
is Limited by RDS(on)
Drain to Source Voltage, VDS (V)
80
120
200
OutputCharacteristics
0
160
40
0
2
4
6
8
VGS=10
VGS=6.0V
Pulse Duration= 80μs
Duty Cycle = 0.5% Max
VGS=5 5V
VGS=5.0V
VGS=4.5V
VGS=4.0V
10
Drain to Source Voltage, VDS (V)
80
120
200
Sturation Characteristics
0
160
40
0
2
4
6
8
Pulse Duration= 80μs
Duty Cycle = 0.5% Max
VGS =5.5V
VGS=5.0V
VGS=4.5V
VGS=4.0V
10
VGS=6.0V
VGS=10V
10
1
0.01
Gate to Source Voltage, VGS (V)
Transfer Characteristics
0
0.1
10
2
4
6
8
TJ=150 C
TJ=25 C
VDS
50V
Pulse Duration= 80μs
Duty Cycle = 0.5% Max
Drain to Source on Resistancevs. Gate Voltage and
Drain Current
Drain Current, ID (A)
9
15
0
12
3
0
2
4
6
8
10
VGS =20V
VGS =10V
6
Pulse Duration= 80μs
Duty Cycle = 0.5% Max
MOSFET
2014. 12. 18
5/6
IRF730/F
Revision No : 0



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