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IRF730 Datasheet(PDF) 6 Page - First Silicon Co., Ltd |
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IRF730 Datasheet(HTML) 6 Page - First Silicon Co., Ltd |
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6 / 6 page ![]() TYPICAL PERFORMANCE CUVES Capacitancevs. Drain to Source Voltage Drain to Source Voltage, VDS (V) 0 1 300 600 1500 10 CISS 100 VGS=0V, f=1MHz CISS=CGS+CGD CRSS =CGD COSS CDS+CGD COSS CRSS 1200 900 Drain Current , ID (A) 4 6 10 Transconductancevs. Drain Current 0 8 2 0 2 4 6 8 TJ=25 C 10 Pulse Duration= 80μs Duty Cycle = 0.5% Max TJ=150 C 100 10 Source to Drain Voltage, VSD (V) Source to Drain DiodeVoltage 0 0.1 2.0 0.4 0.8 1.2 1.6 Pulse Duration= 80μs Duty Cycle = 0.5% Max 1 Gate to Source Voltagevs. Gate Charge Gate Charge, QG (nC) 24 40 0 32 8 0 4 8 12 16 20 VDS=320V 16 ID=5.5A VDS=200V VDS=80V TJ=150 C TJ=25 C MOSFET 2014. 12. 18 6/6 IRF730/F Revision No : 0 |
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