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2SC5820 Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # 2SC5820
Description  Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
PDF  11 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5820 Datasheet(HTML) 2 Page - Renesas Technology Corp

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2SC5820
Rev.2.00 Aug 10, 2005 page 2 of 10
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector cutoff current
ICBO
1
µA
VCB = 12 V, IE = 0
Collector cutoff current
ICEO
1
µA
VCE = 4 V, RBE =
∞
Emitter cutoff current
IEBO
10
µA
VEB = 1.5 V, IC = 0
DC current transfer ratio
hFE
70
110
150
VCE = 2 V, IC = 20 mA
Collector output capacitance
Cob
0.3
0.6
pF
VCB = 2 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
17
20
GHz
VCE = 2 V, IC = 30 mA
f = 2 GHz
Power gain
PG
13
17.5
dB
VCE = 2 V, IC = 30 mA,
f = 1.8 GHz
Noise figure
NF
1.15
1.7
dB
VCE = 2 V, IC = 5 mA,
f = 1.8 GHz
3rd. Order Intercept Point
IP3
10
dBm
VCE = 2 V, IC = 5 mA,
f = 1.8 GHz



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