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ADGS5414 Datasheet(PDF) 3 Page - Analog Devices

Part # ADGS5414
Description  SPI Interface, Octal SPST Switches, 13.5 廓 RON, 짹20 V/36 V, Mux
PDF  30 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADGS5414 Datasheet(HTML) 3 Page - Analog Devices

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Data Sheet
ADGS5414
Rev. 0 | Page 3 of 30
SPECIFICATIONS
±15 V DUAL SUPPLY
Digital logic voltage (VDD) = +15 V ± 10%, negative supply voltage (VSS) = −15 V ± 10%, positive supply voltage (VL) = 2.7 V to 5.5 V,
GND = 0 V, unless otherwise noted.
Table 1.
Parameter
+25°C
−40°C to +85°C
−40°C to +125°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
VDD to VSS
V
On Resistance, RON
13.5
Ω typ
Source voltage (VS) = ±10 V,
IS = −10 mA; see Figure 29
15
18
22
Ω max
VDD = +13.5 V, VSS = −13.5 V
On-Resistance Match Between Channels,
∆RON
0.3
Ω typ
VS = ±10 V, source current
(IS) = −10 mA
0.8
1.3
1.4
Ω max
On-Resistance Flatness, RFLAT (ON)
1.8
Ω typ
VS = ±10 V, IS = −10 mA
2.2
2.6
3
Ω max
LEAKAGE CURRENTS
VDD = +16.5 V, VSS = −16.5 V
Source Off Leakage, IS (Off )
±0.1
nA typ
VS = ±10 V, VD = ±10 V;
see Figure 32
±0.25
±1
±7
nA max
Drain Off Leakage, ID (Off )
±0.1
nA typ
VS = ±10 V, VD = ±10 V;
see Figure 32
±0.25
±1
±7
nA max
Channel On Leakage, ID (On), IS (On)
±0.15
nA typ
VS = VD = ±10 V; see Figure 28
±0.4
±2
±14
nA max
DIGITAL OUTPUT
Output Voltage
Low, VOL
0.4
V max
Sink current (ISINK) = 5 mA
0.2
V max
ISINK = 1 mA
Output Current, Low (IOL) or High (IOH)
0.001
μA typ
Output voltage (VOUT) =
ground voltage (VGND)or VL
±0.1
μA max
Digital Output Capacitance, COUT
4
pF typ
DIGITAL INPUTS
Input Voltage
High, VINH
2
V min
3.3 V < VL ≤ 5.5 V
1.35
V min
2.7 V ≤ VL ≤ 3.3 V
Low, VINL
0.8
V max
3.3 V < VL ≤ 5.5 V
0.8
V max
2.7 V ≤ VL ≤ 3.3 V
Input Current, Low (IINL) or High (IINH)
0.001
μA typ
VIN = VGND or VL
±0.1
μA max
Digital Input Capacitance, CIN
4
pF typ
DYNAMIC CHARACTERISTICS
tON
410
ns typ
Load resistance (RL) = 300 Ω,
load capacitance (CL) = 35 pF
420
515
515
ns max
VS = 10 V; see Figure 37
tOFF
135
ns typ
RL = 300 Ω, CL = 35 pF
140
185
195
ns max
VS = 10 V; see Figure 37
Break-Before-Make Time Delay, tD
260
ns typ
RL = 300 Ω, CL = 35 pF
250
210
ns min
VS1 = VS2 = 10 V; see Figure 36
Charge Injection, QINJ
125
pC typ
VS = 0 V, RS = 0 Ω, CL = 1 nF;
see Figure 38



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