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M69AW024BE Datasheet(PDF) 8 Page - STMicroelectronics

Part # M69AW024BE
Description  16 Mbit (1M x16) 3V Asynchronous PSRAM
PDF  25 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M69AW024BE Datasheet(HTML) 8 Page - STMicroelectronics

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OPERATION
Operational modes are determined by device con-
trol inputs W, E1, E2, LB and UB as summarized
in the Operating Modes table (see Table 2.).
Power On Sequence
Because
the
internal
control
logic
of
the
M69AW024BE needs to be initialized, the follow-
ing power-on procedure must be followed before
the memory is used:
Apply power and wait for VCC to stabilize
–Wait tCHEL while driving both Chip Enable
signals (E1 and E2) High
Activate the memory by driving Chip
Enable (E1) Low.
Read Mode
The device is in Read mode when:
Write Enable (W) is High and
Output Enable (G) Low and
the two Chip Enable signals are asserted
(E1 is Low, and E2 is High).
The time taken to enter Read mode (tELQV, tGLQV
or tBLQV) depends on which of the above signals
was the last to reach the appropriate level.
Data out (DQ15-DQ0) may be indeterminate
during tELQX, tGLQX and tBLQX, but data will always
be valid during tAVQV.
Write Mode
The device is in Write mode when
Write Enable (W) is Low and
Chip Enable (E1) is Low and
the two Chip Enable signals are asserted
(E1 is Low, and E2 is High)
one of Upper Byte Enable (UB) or Lower
Byte Enable (LB) is Low, while the other is
High.
The Write cycle begins just after the event (the fall-
ing edge) that causes the last of these conditions
to become true (tAVWL, tAVEL or tAVBL).
The Write cycle is terminated by the earlier of a ris-
ing edge on Write Enable (W) or Chip Enable (E1).
If the device is in Write mode (Chip Enable (E1) is
Low, Output Enable (G) is Low, Upper Byte En-
able (UB) or Lower Byte Enable (LB) is Low), then
Write Enable (W) will return the outputs to high im-
pedance within tWHDZ of its falling edge. Care
must be taken to avoid bus contention in this type
of operation. Data input must be valid for tDVWH
before the rising edge of Write Enable (W), or for
tDVEH before the rising edge of Chip Enable (E1),
whichever occurs first, and remain valid for tBHDZ,
tWHDZ, tEHDZ.
Standby Mode
The device is in Standby mode when:
Chip Enable (E1)is High and
Chip Enable (E2) is High.
The input/output buffers and the decoding/control
logic are switched off, but the dynamic array con-
tinues to be refreshed. In this mode, the memory
current consumption, ISB, is reduced, and the data
remains valid.
Deep Power-down Mode
The device is in Deep Power-down mode when:
Chip Enable (E2 is Low).



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