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M69AW024BE Datasheet(PDF) 16 Page - STMicroelectronics |
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M69AW024BE Datasheet(HTML) 16 Page - STMicroelectronics |
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16 / 25 page ![]() M69AW024BE 16/25 Table 8. Write Mode AC Characteristics Note: 1. The maximum value of this timing is applicable if E1 is kept Low without any address change. If needed by system operation, please contact your local ST representative for relaxation of the 1000ns limitation. 2. Minimum value must be equal to or greater than the sum of the write pulse ( tELEH, tWLBH or tBLBH and the write recovery time tWHAV. 3. Write pulse is defined from the falling edge of E1, W, or LB/UB, whichever occurs last. 4. Applicable to Byte Masking only. Byte Masking set-up time is defined from the falling edge of E1 or W whichever occurs last. 5. Applicable to Byte Masking only. Byte Masking hold time is defined from the rising edge of E1 or W whichever occurs first. 6. Write recovery is defined from the rising edge of E1, W, or LB/UB, whichever occurs first. 7. If G is Low after tGHEL(min), the read cycle is initiated. In other words, G must be brought High within tGHEL (min) after E1 is brought Low. Once the read cycle is initiated, new write pulse should be input after tAVAX or tELEH minimum value. 8. If G is Low after new address input, the read cycle is initiated. In other words, G must be brought High at the same time or before new address valid. Once the read cycle is initiated, new write pulse should be input after tAVAX or tELEH minimum value. Symbol Alt. Parameter M69AW024BE Unit –60 Min Max tAVAX, tELAX (1,2) tWC Chip Enable Write Cycle Time 70 1000 ns tAVEL, tAVBL, tAVWL (2) tAS Address Set-up Time to Chip Enable Low 0 ns tELEH (3) tCW Chip Enable Write Pulse Width 45 ns tWLBH, tWLWH (3) tWP Write Enable Write Pulse Width 45 ns tBLWH, tBLBH (3) tBW LB, UB Pulse (Write Operation) 45 ns tBHWL (4) tBS LB, UB Byte Masking Set-up Time –5 ns tWHBL (5) tBH LB, UB Hold Time –5 ns tWHAX, tEHAX, tBHAX (6) tWR Write Recovery Time 0 ns tEHEL tCP Chip Enable High Pulse 10 ns tWHWL tWHP Write Enable High Pulse 10 1000 ns tBHBL tBHP LB, UB High Pulse 10 1000 ns tDVEH, tDVWH, tDVBH tDS Data Set-up Time 15 ns tEHDZ, tWHDZ, tBHDZ, tGHDZ tDH Data Hold Time 0 ns tGHEL (7) tOHCL Output Enable High to Chip Enable Low Set-up Time –5 ns tGHAV (8) tOES Output Enable Set-up Time 0 ns tBLBH2 tBWO LB, UB Low to LB, UB High for Page Access 30 ns |
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