MCIMX6DP6AYM2AB datasheet(39/160 Pages) NXP

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Electrical Characteristics

i.MX 6DualPlus/6QuadPlus Applications Processors Industrial Products, Rev. 3, 11/2018

NXP Semiconductors

4.6.3

DDR I/O DC Parameters

The DDR I/O pads support LPDDR2 and DDR3/DDR3L operational modes.

To date LPDDR2 has not been fully validated or supported in the BSP. For further details contact your local

NXP representative.

Table 21. GPIO I/O DC Parameters

Parameter

Symbol

Test Conditions

Min

Max

Unit

High-level output voltage1

1 Overshoot and undershoot conditions (transitions above OVDD and below GND) on switching pads must be held below 0.6 V,

and the duration of the overshoot/undershoot must not exceed 10% of the system clock cycle. Overshoot/ undershoot must be

controlled through printed circuit board layout, transmission line impedance matching, signal line termination, or other methods.

Non-compliance to this specification may affect device reliability or cause permanent damage to the device.

Voh

Ioh = -0.1 mA (DSE2 = 001, 010)

Ioh = -1 mA

(DSE = 011, 100, 101, 110, 111)

2 DSE is the Drive Strength Field setting in the associated IOMUX control register.

OVDD – 0.15

—

Low-level output voltage1

Vol

Iol = 0.1 mA (DSE2 = 001, 010)

Iol = 1mA

(DSE = 011, 100, 101, 110, 111)

—0.15

High-Level DC input voltage1, 3

3 To maintain a valid level, the transition edge of the input must sustain a constant slew rate (monotonic) from the current DC

level through to the target DC level, Vil or Vih. Monotonic input transition time is from 0.1 ns to 1 s.

Vih

—

0.7

× OVDD

OVDD

Low-Level DC input voltage1, 3

Vil

—

0.3

× OVDD V

Input Hysteresis

Vhys

OVDD = 1.8 V

OVDD = 3.3 V

0.25

—

Schmitt trigger VT+3, 4

4 Hysteresis of 250 mV is guaranteed over all operating conditions when hysteresis is enabled.

VT+

—

0.5

× OVDD

—

Schmitt trigger VT–3, 4

VT–

—

0.5

× OVDD V

Input current (no pull-up/down)

Iin

Vin = OVDD or 0

-1

μA

Input current (22 k

Ω pull-up)

Iin

Vin = 0 V

Vin = OVDD

—212

μA

Input current (47 k

Ω pull-up)

Iin

Vin = 0 V

Vin = OVDD

—100

μA

Input current (100 k

Ω pull-up)

Iin

Vin = 0 V

Vin= OVDD

—48

μA

Input current (100 k

Ω pull-down)

Iin

Vin = 0 V

Vin = OVDD

—1

μA

Keeper circuit resistance

Rkeep

Vin = 0.3 x OVDD

Vin = 0.7 x OVDD

105

175

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