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LT3751 Datasheet(PDF) 11 Page - Analog Devices |
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LT3751 Datasheet(HTML) 11 Page - Analog Devices |
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11 / 16 page ![]() LT3750A 11 Rev. 0 For more information www.analog.com APPLICATIONS INFORMATION Board Layout The high voltage operation of the the LT3750A demands careful attention to board layout. Observe the following points: 1. Minimize the area of the high voltage end of the sec- ondary winding. 2. Provide sufficient spacing for all high voltage nodes (NMOS drain, VOUT and the secondary winding of the transformer) in order to meet breakdown voltage requirements. 3. Keep the electrical path formed by C1, the primary of T1 and drain of the NMOS as small as possible. Increasing the size of this path effectively increases the leakage inductance of T1 resulting in an overvoltage condition on the drain of the NMOS. 4. Reduce difference between CHARGE pin control cir- cuit ground and the LT3750A ground to reduce GATE pin turn-off delay during shutdown. This may be done by using a Kelvin connection from the control circuit ground to LT3750A ground, Pin 5. 1 CTRANS CPRI RBG 2 3 4 5 10 LT3750A 9 8 7 6 RSENSE M1 RDCM RVOUT COUT 3750a F04 DOUT T1 1:N CIN VCC VTRANS CHARGE RDONE • • + Figure 4. Recommended Board Layout (Not to Scale) |
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