CMD284

DC-22 GHz Distributed Amplifier

Data Sheet | August 23, 2021 | Subject to change without notice

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Applications Information

Assembly Guidelines

The backside of the CMD284 is RF ground. Die attach should be accomplished with electrically and thermally conductive

epoxy only. Eutectic attach is not recommended. Standard assembly procedures should be followed for high frequency

devices. The top surface of the semiconductor should be made planar to the adjacent RF transmission lines, and the RF

decoupling capacitors placed in close proximity to the DC connections on chip.

RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use of a 0.8 mil

thermosonic wedge bonding is highly recommended as the loop height will be minimized. The RF input and output require

a double bond wire as shown.

The semiconductor is 100 um thick and should be handled by the sides of the die or with a custom collet. Do not make

contact directly with the die surface as this will damage the monolithic circuitry. Handle with care.

Assembly Diagram

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge.

Proper precautions should be observed during handling, assembly and test.

100 pF BYPASS CAP

(example: Knowles part

D25BN101M1EX-MM)

0.01 uF CAP TO GROUND

(example: Knowles part

V30BZ103M1SX-MM)

0.01 uF CAP TO GROUND

to Vdd

RF out

0.01 uF BYPASS CAP

to Vgg

RF in